IRFR3711ZTRR
MOSFET N-CH 20V 93A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3711ZTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) rating of 93A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). It offers a low on-resistance (Rds On) of 5.7mOhm at 15A and 10V gate drive. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.45V at 250µA. Key parameters include a gate charge (Qg) of 27nC at 4.5V and input capacitance (Ciss) of 2160pF at 10V. The IRFR3711ZTRR is supplied in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. This MOSFET is commonly utilized in automotive, industrial, and power supply applications where robust performance and thermal management are critical. The component is provided in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
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