IRFR3711ZTRPBF
MOSFET N-CH 20V 93A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR3711ZTRPBF, offers a 20V drain-source voltage and a continuous drain current of 93A at 25°C (Tc). This surface mount device, housed in a TO-252AA (DPAK) package, features a low on-resistance of 5.7mOhm maximum at 15A and 10V Vgs. The gate charge is specified at 27 nC maximum at 4.5V, with input capacitance (Ciss) at 2160 pF maximum at 10V. Designed for high-efficiency power switching applications, it supports a gate-source voltage range of ±20V and operates within a temperature range of -55°C to 175°C (TJ). Maximum power dissipation is 79W (Tc). This component is commonly utilized in automotive, industrial, and consumer electronics power management designs. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
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