IRFR3711ZCTRPBF
MOSFET N-CH 20V 93A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel IRFR3711ZCTRPBF offers a 20V drain-source breakdown voltage and a continuous drain current capability of 93A at 25°C (Tc). This device features a low on-resistance of 5.7mOhm at 15A and 10V Vgs, coupled with a typical gate charge of 27nC at 4.5V Vgs. The input capacitance (Ciss) is specified at a maximum of 2160pF at 10V Vds. Packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for high-density applications, this MOSFET utilizes Metal Oxide technology. It finds application in various power management solutions, including automotive systems and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |