IRFR3711Z
MOSFET N-CH 20V 93A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3711Z is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 93A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance is specified as 5.7mOhm at 15A and 10V Vgs, achievable with gate drive voltages ranging from 4.5V to 10V. Key parameters include a gate charge of 27 nC at 4.5V Vgs and an input capacitance of 2160 pF at 10V Vds. The device utilizes advanced MOSFET technology and is packaged in a TO-252AA (DPAK) surface mount configuration. This component is suitable for use in automotive, industrial power supply, and high-current switching applications. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
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