IRFR3711
MOSFET N-CH 20V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3711 is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 100A at 25°C (Tc). The IRFR3711 offers a low on-resistance (Rds On) of 6.5mOhm maximum at 15A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a gate charge (Qg) of 44 nC maximum at 4.5V and an input capacitance (Ciss) of 2980 pF maximum at 10V. With a maximum power dissipation of 120W (Tc), this MOSFET is suitable for demanding thermal environments. The device is housed in a TO-252AA (DPAK) surface-mount package, facilitating integration into compact designs. The operating temperature range is -55°C to 150°C (TJ). Applications for the IRFR3711 include automotive systems, industrial power supplies, and consumer electronics requiring robust power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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