IRFR3710ZTRRPBF
MOSFET N-CH 100V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3710ZTRRPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 42A at 25°C (Tc). With a low On-Resistance (Rds On) of 18mOhm maximum at 33A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 140W (Tc) and is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key characteristics include a gate charge (Qg) of 100 nC maximum at 10V and an input capacitance (Ciss) of 2930 pF maximum at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in industries such as automotive, industrial motor control, and power supply units.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
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