IRFR3710ZTR
MOSFET N-CH 100V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3710ZTR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C (Tc). The IRFR3710ZTR offers a low on-resistance of 18mOhm maximum at 33A and 10V Vgs, ensuring minimal conduction losses. With a maximum power dissipation of 140W at 25°C (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The device is packaged in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key electrical characteristics include a gate charge of 100 nC at 10V Vgs and input capacitance of 2930 pF at 25V Vds. Typical applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
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