IRFR3709ZPBF
MOSFET N-CH 30V 86A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3709ZPBF is an N-channel power MOSFET featuring a 30V drain-source voltage and 86A continuous drain current capability at 25°C case temperature. This device is housed in a TO-252AA (DPAK) surface-mount package, offering a low on-resistance of 6.5mOhm maximum at 15A and 10V gate-source voltage. The IRFR3709ZPBF exhibits a typical gate charge of 26nC at 4.5V and input capacitance of 2330pF at 15V. With a maximum power dissipation of 79W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 15 V |
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