IRFR3708TRPBF
MOSFET N-CH 30V 61A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3708TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 61A at 25°C (Tc), with a maximum power dissipation of 87W (Tc). The low on-resistance of 12.5mOhm at 15A and 10V (Vgs) minimizes conduction losses. The device is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 24 nC at 4.5V (Vgs) and input capacitance (Ciss) of 2417 pF at 15V (Vds). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and power supply designs requiring robust performance and thermal management within a compact footprint. The IRFR3708TRPBF is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |