IRFR3708PBF
MOSFET N-CH 30V 61A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3708PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This surface mount component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 61A at 25°C. The low on-resistance, specified at a maximum of 12.5mOhm at 15A and 10V Vgs, minimizes conduction losses. Its 87W maximum power dissipation (Tc) and operating temperature range of -55°C to 175°C make it suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 24nC at 4.5V and input capacitance (Ciss) of 2417pF at 15V. The TO-252AA (DPAK) package facilitates efficient thermal management and board-level integration. This MOSFET is commonly utilized in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
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