IRFR3707ZTRPBF
MOSFET N-CH 30V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3707ZTRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 56A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The low on-resistance of 9.5mOhm at 15A and 10V (Vgs) drive voltage, coupled with a gate charge (Qg) of 14nC at 4.5V (Vgs), ensures efficient switching performance. With an input capacitance (Ciss) of 1150pF at 15V (Vds), it is suitable for various power management tasks. The MOSFET is housed in a TO-252AA (DPAK) surface-mount package, suitable for high-density board layouts. This device operates across a wide temperature range of -55°C to 175°C (TJ). The IRFR3707ZTRPBF finds application in sectors such as automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
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