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IRFR3707ZTRLPBF

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IRFR3707ZTRLPBF

MOSFET N-CH 30V 56A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRFR3707ZTRLPBF is a surface-mount N-channel Power MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 56A at 25°C (Tc). With a maximum on-resistance (Rds On) of 9.5mOhm at 15A and 10V, it is designed for efficient power switching. The device offers a gate charge (Qg) of 14 nC at 4.5V and an input capacitance (Ciss) of 1150 pF at 15V. Operating within a temperature range of -55°C to 175°C (TJ), the IRFR3707ZTRLPBF is available in a TO-252AA (DPAK) package, supplied on tape and reel. Its specifications make it suitable for applications in power management, automotive systems, and industrial motor control.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id2.25V @ 25µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V

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