IRFR3707Z
MOSFET N-CH 30V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3707Z is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vds) of 30V and a continuous drain current (Id) of 56A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The low on-resistance (Rds On) of 9.5mOhm at 15A and 10V gate drive, coupled with a gate charge (Qg) of 14 nC at 4.5V, ensures optimal performance. The input capacitance (Ciss) is rated at 1150 pF maximum at 15V. This surface-mount component, packaged in a TO-252AA (DPAK), operates across a temperature range of -55°C to 175°C (TJ). Applications for this MOSFET include automotive systems and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
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