IRFR3707TR
MOSFET N-CH 30V 61A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3707TR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 61A at 25°C (Tc). The low on-resistance (Rds On) of 13mOhm at 15A and 10V Vgs ensures minimal conduction losses. With a maximum power dissipation of 87W (Tc) and a wide operating temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The device is supplied in a TO-252AA (DPAK) surface-mount package, commonly utilized in automotive, industrial power control, and computing applications. Key parameters include a gate charge (Qg) of 19 nC at 4.5V and input capacitance (Ciss) of 1990 pF at 15V. The product is provided in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15 V |
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