IRFR3706PBF
MOSFET N-CH 20V 75A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3706PBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 75A at 25°C (Tc). The low on-resistance (Rds On) of 9mOhm is achieved at 15A and 10V Vgs, facilitating minimal conduction losses. With a maximum power dissipation of 88W (Tc), it is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 35 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2410 pF maximum at 10V Vds. The IRFR3706PBF is packaged in a TO-252AA (DPAK) surface-mount configuration, ideal for automated assembly. This component finds application in industries such as automotive, industrial power control, and consumer electronics. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 2.8V to 10V, with a maximum gate-source voltage (Vgs) of ±12V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V |
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