IRFR3706CTRRPBF
MOSFET N-CH 20V 75A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3706CTRRPBF is a 20V N-Channel power MOSFET in a TO-252AA (DPAK) package. This device features a low Rds(on) of 9mOhm at 15A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 75A at 25°C (Tc) and a maximum power dissipation of 88W (Tc), it is suitable for high-current applications. The gate charge is specified at 35 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 2410 pF maximum at 10V Vds. Operating temperature ranges from -55°C to 175°C (TJ). The IRFR3706CTRRPBF is commonly utilized in automotive systems, industrial power supplies, and high-efficiency DC-DC converters. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V |
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