IRFR3704ZTRPBF
MOSFET N-CH 20V 60A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3704ZTRPBF is a surface-mount N-Channel Power MOSFET. This component features a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) of 60 A at 25°C (Tc). The Rds(on) is specified at a maximum of 8.4 mOhm at 15 A and 10 V gate-source voltage. The device offers a low gate charge of 14 nC at 4.5 V, and exhibits an input capacitance (Ciss) of 1190 pF at 10 V. With a maximum power dissipation of 48 W (Tc), it operates across a temperature range of -55°C to 175°C (TJ). The IRFR3704ZTRPBF is supplied in a TO-252AA (DPAK) package, suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |