IRFR3704ZTRLPBF
MOSFET N-CH 20V 60A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3704ZTRLPBF is an N-channel power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). With a low on-resistance of 8.4mOhm maximum at 15A and 10V Vgs, it offers efficient power switching. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 14 nC maximum at 4.5V Vgs and an input capacitance of 1190 pF maximum at 10V Vds. This MOSFET is suitable for automotive, industrial, and power supply applications where high current handling and low conduction losses are critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
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