IRFR3704ZPBF
MOSFET N-CH 20V 60A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' HEXFET® IRFR3704ZPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source voltage and supports a continuous drain current of 60A at 25°C (Tc), with a maximum power dissipation of 48W (Tc). The low on-resistance of 8.4mOhm at 15A and 10V further enhances its performance.
Operating with a gate-source voltage range of ±20V, the IRFR3704ZPBF exhibits a gate charge (Qg) of 14 nC at 4.5V and an input capacitance (Ciss) of 1190 pF at 10V. It is housed in a TO-252AA (DPAK) surface-mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C (TJ). This component is widely utilized in automotive, industrial power control, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
