IRFR3704ZCPBF
MOSFET N-CH 20V 60A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3704ZCPBF is an N-channel power MOSFET with a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 60A at 25°C. This component features a low on-resistance (Rds On) of 8.4mOhm at 15A and 10V. The gate charge (Qg) is specified at a maximum of 14 nC at 4.5V, with input capacitance (Ciss) at 1190 pF maximum at 10V. Designed for surface mounting, it is housed in a TO-252AA (DPAK) package. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
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