IRFR3704
MOSFET N-CH 20V 75A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3704 is an N-Channel power MOSFET featuring a 20V drain-to-source voltage and a continuous drain current of 75A at 25°C (Tc). This device offers a low on-resistance of 9.5mOhm maximum at 15A and 10V Vgs, with a gate charge of 19nC maximum at 4.5V. The input capacitance (Ciss) is 1996pF maximum at 10V. Designed for efficient power management, it has a maximum power dissipation of 90W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). The IRFR3704 is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for applications in automotive, industrial, and consumer electronics requiring high current switching. The maximum gate-source voltage is ±20V, and the gate threshold voltage is 3V maximum at 250µA.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1996 pF @ 10 V |
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