IRFR3607PBF
MOSFET N-CH 75V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3607PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 56A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The ultra-low on-resistance (Rds On) of 9mOhm at 46A and 10V gate drive makes it highly efficient. Key parameters include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 3070 pF at 50V. The IRFR3607PBF is housed in a TO-252AA (DPAK) surface-mount package, suitable for high-density board designs. Its robust construction and performance characteristics make it a suitable choice for power conversion, industrial motor control, and automotive systems. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |