IRFR3518PBF
MOSFET N-CH 80V 38A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3518PBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 80 V drain-source voltage (Vdss) and a continuous drain current (Id) of 38 A at 25°C (Tc) with a maximum power dissipation of 110 W (Tc). The IRFR3518PBF exhibits a low on-resistance (Rds On) of 29 mOhm at 18 A and 10 V gate drive. Key electrical parameters include 1710 pF input capacitance (Ciss) at 25 V and 56 nC gate charge (Qg) at 10 V. This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252AA (DPAK) surface-mount package. Its robust design makes it suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
