IRFR3505PBF
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3505PBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C (Tc). With a maximum on-resistance (Rds On) of 13mOhm at 30A and 10V gate-source voltage (Vgs), it offers low conduction losses. The device provides a maximum power dissipation of 140W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Key characteristics include a gate charge (Qg) of 93 nC at 10V and input capacitance (Ciss) of 2030 pF at 25V. Packaged in a TO-252AA (DPAK) surface-mount configuration, the IRFR3505PBF is suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF @ 25 V |
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