IRFR3504ZTRPBF
MOSFET N-CH 40V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3504ZTRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 42A at 25°C (Tc). The low on-resistance (Rds On) of 9mOhm at 42A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 90W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for high-power switching and motor control applications. The TO-252AA (DPAK) surface mount package facilitates efficient thermal management. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 1510 pF at 25V. This component is commonly found in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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