IRFR3504ZTRLPBF
MOSFET N-CH 40V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3504ZTRLPBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current capability of 42A at 25°C (Tc). The low on-resistance (Rds On) of 9mOhm at 42A and 10V Vgs ensures minimal conduction losses. With a maximum power dissipation of 90W (Tc), it is suitable for demanding power management tasks. The device is packaged in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel for automated assembly. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 1510 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET finds application in various industries including automotive, industrial power control, and consumer electronics where robust power switching is required.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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