IRFR3504TRPBF
MOSFET N-CH 40V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3504TRPBF is an N-Channel power MOSFET designed for high-performance applications. This component features a 40V drain-source breakdown voltage (Vds) and a continuous drain current (Id) rating of 30A at 25°C, with a maximum power dissipation of 140W (Tc). The Rds(on) is specified at a low 9.2mOhm at 30A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 71 nC at 10V and input capacitance (Ciss) of 2150 pF at 25V. The device operates with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. It is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial power control, and high-efficiency switching applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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