IRFR3504PBF
MOSFET N-CH 40V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3504PBF is an N-channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 30A at 25°C (Tc). The low on-resistance of 9.2mOhm (max) at 30A and 10V gate-source voltage minimizes conduction losses. With a maximum power dissipation of 140W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for high-power switching. The device is packaged in a TO-252AA (DPAK) surface-mount case. Key parameters include a gate charge (Qg) of 71nC at 10V and input capacitance (Ciss) of 2150pF at 25V. This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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