IRFR3418TRPBF
MOSFET N-CH 80V 70A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3418TRPBF is an N-Channel power MOSFET featuring 80V drain-source voltage and 70A continuous drain current at 25°C (Tc). This device boasts a low on-resistance of 14mOhm maximum at 18A, 10V, optimized for efficient power switching. With a gate charge (Qg) of 94 nC maximum at 10V and input capacitance (Ciss) of 3510 pF maximum at 25V, it offers robust performance characteristics. The TO-252AA (DPAK) surface mount package provides a compact footprint suitable for high-density designs. Power dissipation is rated at 3.8W (Ta) and 140W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is utilized in industrial and automotive applications requiring reliable power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3510 pF @ 25 V |