IRFR3418TRLPBF
MOSFET N-CH 80V 70A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Series IRFR3418TRLPBF is an N-Channel Power MOSFET. This device features an 80V drain-to-source breakdown voltage with a continuous drain current capability of 70A at 25°C (Tc). The low on-resistance is specified at 14mOhm maximum at 18A and 10V gate drive. Key parameters include a gate charge of 94 nC (max) at 10V and input capacitance of 3510 pF (max) at 25V. Power dissipation is rated at 3.8W (Ta) and 140W (Tc). The component is housed in a TO-252AA (DPAK) surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial automation, power supply design, and motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3510 pF @ 25 V |
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