IRFR3418PBF
MOSFET N-CH 80V 70A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3418PBF is an N-Channel Power MOSFET with a 80 V drain-to-source voltage (Vdss). This component features a low on-resistance (Rds On) of 14 mOhm maximum at 18 A and 10 V Vgs, facilitating efficient power transfer. The continuous drain current (Id) at 25°C is rated at 70 A (Tc), with a significant power dissipation capability of 140 W (Tc). The MOSFET is housed in a TO-252AA (DPAK) surface mount package, suitable for high-density applications. Key parameters include a gate charge (Qg) of 94 nC at 10 V and input capacitance (Ciss) of 3510 pF at 25 V. This device is engineered for demanding applications across industrial and automotive sectors. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3510 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
