IRFR3412TRLPBF
MOSFET N-CH 100V 48A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR3412TRLPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a drain-source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) capability of 48A at 25°C (Tc). With a low on-resistance (Rds On) of 25mOhm maximum at 29A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 140W (Tc) and is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for automated assembly. Key parameters include a gate charge (Qg) of 89 nC (max) at 10V Vgs and input capacitance (Ciss) of 3430 pF (max) at 25V Vds. This component is utilized in various industrial sectors, including automotive and power supply applications. The part is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
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