IRFR3411PBF
MOSFET N-CH 100V 32A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3411PBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 32A at 25°C (Tc), with a maximum power dissipation of 130W (Tc). The low on-resistance of 44mOhm at 16A and 10V Vgs, coupled with a gate charge (Qg) of 71 nC at 10V, ensures efficient operation. Packaged in a TO-252AA (DPAK) surface mount configuration, it offers thermal performance suitable for demanding power management solutions. Industries such as automotive, industrial automation, and power supplies commonly utilize this HEXFET® series component. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |
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