IRFR3410TRRPBF
MOSFET N-CH 100V 31A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3410TRRPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 31A at 25°C (Tc). The Rds(On) is specified at a maximum of 39mOhm at 18A and 10V Vgs, ensuring low conduction losses. Key parameters include a Gate Charge (Qg) of 56nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 1690pF (max) at 25V Vds. With a maximum power dissipation of 3W (Ta) and 110W (Tc), this MOSFET is suitable for demanding thermal environments. The component is housed in a TO-252AA (DPAK) package, facilitating surface mounting. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET finds application in areas such as power supplies, motor control, and battery management systems. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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