IRFR3103TRL
MOSFET N-CH 400V 1.7A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3103TRL is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.7A at 25°C ambient. The Rds On is specified at a maximum of 3.6 Ohms at 1A and 10V gate drive. With a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 170 pF at 25V, it offers optimized switching characteristics. The device is supplied in a TO-252AA (DPAK) package, suitable for surface mounting, and is delivered on tape and reel. Power dissipation capabilities are 2.5W (Ta) and 25W (Tc). This component finds application in power supplies, industrial automation, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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