IRFR3103TR
MOSFET N-CH 400V 1.7A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3103TR is a N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This component features a Vdss rating of 400V and a continuous drain current capability of 1.7A at 25°C (Ta), with a maximum power dissipation of 2.5W (Ta) and 25W (Tc). The device exhibits a typical Rds On of 3.6 Ohms at 1A, 10V, with a gate drive voltage specified at 10V. Key electrical parameters include a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 170 pF at 25V. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is 4V at 250µA. This MOSFET is commonly utilized in power supply circuits, motor control, and lighting applications. The IRFR3103TR is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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