IRFR3103
MOSFET N-CH 400V 1.7A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR3103 is a N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This device features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.7A at 25°C (Ta). The Rds(On) is specified at a maximum of 3.6 Ohms at 1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12nC (maximum) at 10V and input capacitance (Ciss) of 170pF (maximum) at 25V. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). This component is suitable for applications in industrial and automotive sectors requiring high voltage switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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