IRFR2905ZTRRPBF
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2905ZTRRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) rating of 42 A at 25°C (Tc), with a maximum power dissipation of 110 W (Tc). The Rds On is specified at a maximum of 14.5 mOhm at 36A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 44 nC at 10V and Input Capacitance (Ciss) of 1380 pF at 25V. The MOSFET utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel, making it suitable for automated assembly processes. Its robust construction and electrical characteristics are well-suited for applications in automotive, industrial power control, and high-current switching circuits. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 25 V |
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