IRFR2905ZTRR
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2905ZTRR is a N-Channel Power MOSFET featuring a 55V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 14.5mOhm maximum at 36A and 10V Vgs. The MOSFET utilizes advanced HEXFET® technology for high efficiency and performance. It is supplied in a TO-252AA (DPAK) surface mount package, compatible with automated assembly processes. Key parameters include a gate charge (Qg) of 44nC at 10V Vgs and an input capacitance (Ciss) of 1380pF at 25V Vds. The maximum power dissipation is rated at 110W (Tc). The IRFR2905ZTRR is suitable for applications in power supply units, automotive electronics, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 25 V |
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