IRFR2607ZPBF
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFR2607ZPBF, offers a 75V drain-source voltage and 42A continuous drain current at 25°C. This device features low on-resistance of 22mOhm maximum at 30A and 10V Vgs, with a gate charge of 51nC maximum at 10V. The input capacitance (Ciss) is 1440pF maximum at 25V. Designed for surface mounting, it is supplied in a TO-252-3, DPAK package. The maximum power dissipation is 110W, and it operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO252-3-901|DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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