IRFR2607Z
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2607Z is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The Rds On is specified at a maximum of 22mOhm at 30A and 10V Vgs. Key characteristics include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 1440 pF at 25V. The IRFR2607Z is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C (TJ). This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO252-3-901|DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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