IRFR2605
MOSFET N-CH 55V 19A D-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFR2605 is an N-Channel Power MOSFET featuring a 55V drain-source voltage and continuous drain current capability of 19A at 25°C. This component offers a low on-resistance of 85mOhm maximum at 11A and 10V gate drive voltage. With a gate charge of 23 nC maximum at 10V and input capacitance of 420 pF maximum at 25V, it is suitable for efficient switching applications. The device is packaged in a TO-252AA (DPAK) surface-mount configuration and supports a maximum power dissipation of 50W (Tc). Typical applications include power management, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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