IRFR2407TRRPBF
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2407TRRPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C. The IRFR2407TRRPBF offers a low on-resistance (Rds On) of 26mOhm maximum at 25A and 10V gate-source voltage, minimizing conduction losses. With a maximum power dissipation of 110W at 25°C (Tc), it is suitable for demanding thermal environments. The device utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface-mount package, compatible with tape and reel packaging. Key parameters include a gate charge (Qg) of 110 nC maximum at 10V and input capacitance (Ciss) of 2400 pF maximum at 25V. Typical applications include power supplies, motor control, and battery management systems across industrial and automotive sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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