IRFR2407TRLPBF
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET IRFR2407TRLPBF is an N-Channel power MOSFET featuring a 75V drain-source voltage (Vdss) and a continuous drain current of 42A at 25°C (Tc). This device offers a low on-resistance of 26mOhm maximum at 25A and 10V (Vgs). With a maximum power dissipation of 110W (Tc) and operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding applications. The component is packaged in a TO-252AA (DPAK) surface-mount package and supplied on tape and reel. Key parameters include a gate charge (Qg) of 110 nC maximum at 10V and input capacitance (Ciss) of 2400 pF maximum at 25V. This MOSFET is utilized in various industrial sectors including automotive and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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