IRFR2407TRL
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2407TRL is a N-Channel power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Current rating (Id) of 42A at 25°C (Tc). The Rds(on) is specified at a maximum of 26mOhm at 25A and 10V Vgs. With a high power dissipation capability of 110W (Tc), the IRFR2407TRL is suitable for demanding power management solutions. Key parameters include a Gate Charge (Qg) of 110 nC @ 10V and Input Capacitance (Ciss) of 2400 pF @ 25V. The TO-252AA (DPAK) surface mount package facilitates compact board designs. This component finds application in power supplies, automotive electronics, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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