IRFR2405TRR
MOSFET N-CH 55V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2405TRR is a 55V N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This device features a maximum continuous drain current of 56A (Tc) and an on-resistance (Rds On) of 16mOhm at 34A and 10V Vgs. The IRFR2405TRR exhibits a low gate charge of 110 nC at 10V Vgs and an input capacitance (Ciss) of 2430 pF at 25V Vds. With a power dissipation of 110W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for high-power switching applications in automotive and industrial sectors. The component is supplied on tape and reel for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 25 V |
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