IRFR2405PBF
MOSFET N-CH 55V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2405PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 56A at 25°C (Tc). With a low on-resistance (Rds On) of 16mOhm at 34A and 10V Vgs, it offers efficient power handling, dissipating up to 110W (Tc). The device utilizes a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2430 pF at 25V. This MOSFET is commonly employed in industrial automation, power supplies, and automotive systems where robust switching performance is critical. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 25 V |
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