IRFR2307ZPBF
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2307ZPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 42 A at 25°C (Tc). The device offers a low on-resistance (Rds(on)) of 16 mOhm maximum at 32 A and 10 V gate drive voltage. With a maximum power dissipation of 110 W (Tc), it is suitable for demanding power management tasks. The TO-252AA (DPAK) surface-mount package facilitates integration into compact designs. Key electrical parameters include a gate charge (Qg) of 75 nC at 10 V and input capacitance (Ciss) of 2190 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and telecommunications infrastructure.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
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