IRFR2307Z
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR2307Z is an N-Channel Power MOSFET designed for demanding applications. This component features a 75V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 42A at 25°C, with a maximum power dissipation (Pd) of 110W (Tc). The device exhibits a low on-resistance (Rds(on)) of 16mOhm at 32A and 10V Vgs. Key parameters include a gate charge (Qg) of 75 nC at 10V and an input capacitance (Ciss) of 2190 pF at 25V. Operating across a temperature range of -55°C to 175°C, the IRFR2307Z is housed in a TO-252AA (DPAK) surface-mount package. This MOSFET is suitable for use in industrial automation, power supply, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
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