IRFR220NTRRPBF
MOSFET N-CH 200V 5A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFR220NTRRPBF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 5A at 25°C. With a maximum power dissipation of 43W and a low on-resistance (Rds On) of 600mOhm at 2.9A and 10V gate drive, it ensures minimal conduction losses. The device is housed in a TO-252AA (DPAK) surface-mount package, facilitating automated assembly. Key electrical specifications include a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 300 pF at 25V. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive control systems. The component is supplied on tape and reel (TR) for high-volume manufacturing.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |